The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Dec. 21, 1987
Applicant:
Inventor:
James M McDavid, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437203 ; 437913 ; 437984 ; 437947 ; 437 40 ; 148D / ;
Abstract
A simplified process for metal gate and contact/interconnect systems for MOS VLSI devices employs a refractory metal structure for the gate, including a thick layer of tungsten alone, with stress and adhesion controlled by the deposition conditions. The metal gate receives sidewall oxide spacers during a metal-cladding operation for the source/drain areas. Contacts to the source/drain region include a molybdenum/tungsten stack and a top layer of gold.