The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Aug. 02, 1984
Applicant:
Inventor:
James M McDavid, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
B23K / ; H01L / ;
U.S. Cl.
CPC ...
2191 / ; 2191 / ; 2191 / ; 2191 / ; 2191 / ; 427 531 ; 148-15 ; 2957 / ; 29591 ;
Abstract
A semiconductor device is programmed by a laser beam which causes an electrical short between two conductors on a silicon substrate, as by melting an insulator between the conductors and fusing or shorting the conductors. The conductors may be first and second levels of polycrystalline silicon in a standard double-level poly process, and the insulator is thermal silicon oxide. The laser beam is focused on an area which is shielded from the silicon substrate by the first-level conductor, so heating and disruption of the substrate or underlying circuit structure is minimized.