Company Filing History:

29 out of 1,088

Vanguard International Semiconductor Corporation

patents

3 out of 9,138

Industrial Technology Research Institute

patents

1 out of 7

Taiwan Imagingtek Corporation

patents

Years Active: 1996-2009

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33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7589990 - Semiconductor ROM device and manufacturing method thereof (2009-09-15),

2. 7129134 - Fabrication method for flash memory source line and flash memory (2006-10-31),

3. 6762096 - Method for forming a polysilicon spacer with a vertical profile (2004-07-13),

4. 6555433 - Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor (2003-04-29),

5. 6476437 - Crown or stack capacitor with a monolithic fin structure (2002-11-05),

6. 6351037 - Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuits (2002-02-26),

7. 6344392 - Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor (2002-02-05),

8. 6277719 - Method for fabricating a low resistance Poly-Si/metal gate (2001-08-21),

9. 6249018 - Fabrication method to approach the conducting structure of a DRAM cell with straightforward bit line (2001-06-19),

10. 6239014 - Tungsten bit line structure featuring a sandwich capping layer (2001-05-29),

11. 6171929 - Shallow trench isolator via non-critical chemical mechanical polishing (2001-01-09),

12. 6168987 - Method for fabricating crown-shaped capacitor structures (2001-01-02),

13. 6150247 - Method for making polycide-to-polycide low contact resistance contacts (2000-11-21),

14. 6136643 - Method for fabricating capacitor-over-bit-line dynamic random access (2000-10-24),

15. 6133599 - Design and a novel process for formation of DRAM bit line and capacitor (2000-10-17),

Title: The Innovative Journey of Ing-Ruey Liaw

Introduction: Ing-Ruey Liaw, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Ing-Ruey Liaw holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials. His most recent patents focus on sustainable energy solutions and cutting-edge semiconductor devices.

Career Highlights: With a background in engineering and a passion for innovation, Ing-Ruey Liaw has had a distinguished career working in both academia and industry. He has held key positions in research institutions and technology companies, where he has led groundbreaking projects and developed innovative technologies.

Collaborations: Throughout his career, Ing-Ruey Liaw has collaborated with leading researchers, engineers, and scientists from around the world. His collaborative efforts have resulted in the development of groundbreaking technologies and solutions that have had a lasting impact on various industries.

Conclusion: Ing-Ruey Liaw's relentless pursuit of innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators and serves as a testament to the power of creativity and perseverance in driving progress and change.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.