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Hsinchu, Taiwan

Ing-Ruey Liaw

This inventor holds 33 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Vanguard International Semiconductor Corporation, Industrial Technology Research Institute, Taiwan Imagingtek Corporation. Active years: 1996-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ing-Ruey Liaw. Retrieved from https://idiyas.com/inventor/ing-ruey-liaw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 14

Forward Citations = 460(Granted Patents)


Location History:

  • Chutung, TW (1998 - 2000)
  • Shinchu, TW (2000)
  • Hisnchu, TW (2001)
  • Hsinchu, TW (1996 - 2009)

Company Filing History:

goldMedal29 out of 1,132 
 
Vanguard International Semiconductor Corporation
 patents
silverMedal3 out of 9,307 
 
Industrial Technology Research Institute
 patents
bronzeMedal1 out of 7 
 
Taiwan Imagingtek Corporation
 patents

Years Active: 1996-2009

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Areas of Expertise:
Semiconductor ROM
Flash Memory
Polysilicon Spacer
Stack Capacitor
Low Resistance Contacts
DRAM Cells
Shallow Trench Isolation
Plasma-Enhanced CVD
33 patents (USPTO):Explore Patents
1. 7589990 - Semiconductor ROM device and manufacturing method thereof (2009-09-15),
2. 7129134 - Fabrication method for flash memory source line and flash memory (2006-10-31),
3. 6762096 - Method for forming a polysilicon spacer with a vertical profile (2004-07-13),
4. 6555433 - Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor (2003-04-29),
5. 6476437 - Crown or stack capacitor with a monolithic fin structure (2002-11-05),
6. 6351037 - Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuits (2002-02-26),
7. 6344392 - Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor (2002-02-05),
8. 6277719 - Method for fabricating a low resistance Poly-Si/metal gate (2001-08-21),
9. 6249018 - Fabrication method to approach the conducting structure of a DRAM cell with straightforward bit line (2001-06-19),
10. 6239014 - Tungsten bit line structure featuring a sandwich capping layer (2001-05-29),
11. 6171929 - Shallow trench isolator via non-critical chemical mechanical polishing (2001-01-09),
12. 6168987 - Method for fabricating crown-shaped capacitor structures (2001-01-02),
13. 6150247 - Method for making polycide-to-polycide low contact resistance contacts (2000-11-21),
14. 6136643 - Method for fabricating capacitor-over-bit-line dynamic random access (2000-10-24),
15. 6133599 - Design and a novel process for formation of DRAM bit line and capacitor (2000-10-17),

Title: The Innovative Journey of Ing-Ruey Liaw

Introduction: Ing-Ruey Liaw, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Ing-Ruey Liaw holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials. His most recent patents focus on sustainable energy solutions and cutting-edge semiconductor devices.

Career Highlights: With a background in engineering and a passion for innovation, Ing-Ruey Liaw has had a distinguished career working in both academia and industry. He has held key positions in research institutions and technology companies, where he has led groundbreaking projects and developed innovative technologies.

Collaborations: Throughout his career, Ing-Ruey Liaw has collaborated with leading researchers, engineers, and scientists from around the world. His collaborative efforts have resulted in the development of groundbreaking technologies and solutions that have had a lasting impact on various industries.

Conclusion: Ing-Ruey Liaw's relentless pursuit of innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators and serves as a testament to the power of creativity and perseverance in driving progress and change.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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