The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Aug. 16, 1999
Ing-Ruey Liaw, Hsin-Chu, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A process of fabricating a tungsten bit line structure, capped with a composite insulator shape, has been developed. The process features the use of a silicon oxide component, used as part of the capping, composite shape, employed to reduce the coupling capacitance generated by the proximity of the tungsten bit line structure, to adjacent conductive structures. The silicon oxide component is formed on an underlying, thin silicon nitride shape, which in turn overlays the tungsten bit line structure, preventing oxidation of the tungsten surface during the silicon oxide deposition. A capping, silicon nitride shape is placed on the underlying silicon oxide component. The use of this sandwich, or composite insulator shape, allows a tungsten bit line structure, with a sheet resistance between about 1 to 3 ohms/square, to be realized, with a reduction in coupling capacitance, in turn realized via the use of the silicon oxide component.