The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Jun. 18, 2001
Ing-Ruey Liaw, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
In this process, a capacitor core is formed on a semiconductor device with a first conductive sublayer in contact with a plug. First form a stack of alternately doped and undoped oxide layers on the sublayer with the stack comprising a bottom layer formed on top of the sublayer and each additional layer in the stack formed on a previous one of the layers in the stack. Then form a mask over the stack and etch through the mask to pattern the oxide layers to form cavities in the stack of oxide layers reaching down through the stack to the sublayer. Then perform differential etching of the oxide layers in the cavities. Form undercut edges in the doped oxide layers with the undoped oxide layers having cantilevered ribs projecting from the stacks into the cavities to complete the cavities. Deposit a bulk/thick film monolithic conductive layer into the cavities to form a monolithic capacitor core with counterpart cantilevered ribs.