I-Hsien Tseng

Title: I-Hsien Tseng: Innovator in Resistive Memory Technology

Introduction

I-Hsien Tseng is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of resistive memory technology, holding a total of 8 patents. His innovative work has paved the way for advancements in memory storage solutions.

Latest Patents

Among his latest patents is a method for the forming operation of a resistive memory device. This operation involves applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell. It includes performing a dense switching forming operation, which alternates between dense set operations and dense reset operations on the target memory cell. Additionally, he has developed an operating method for a resistive memory storage apparatus, which applies a forming voltage to a memory cell and adjusts it based on the cell current.

Career Highlights

I-Hsien Tseng has worked with notable companies in the electronics sector, including Winbond Electronics Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, I-Hsien has collaborated with talented individuals such as Lih-Wei Lin and Tsung-Huan Tsai. These partnerships have fostered a creative environment that has led to groundbreaking advancements in resistive memory technology.

Conclusion

I-Hsien Tseng's contributions to resistive memory technology and his impressive portfolio of patents highlight his role as a leading inventor in the field. His work continues to influence the development of advanced memory storage solutions.