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For the Inventor, By the Inventor

Seongnam-si, South Korea

Hyung-joon Kwon

USPTO Granted Patents = 10 

Average Co-Inventor Count = 1.9

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Yongin, KR (2003)
  • Seoul, KR (2006 - 2009)
  • Seongnam-si, KR (2014 - 2016)

Company Filing History:

goldMedal10 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2016

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10 patents (USPTO):Explore Patents
1. 9312478 - Magnetic devices and methods of manufacturing the same (2016-04-12),
2. 9306156 - Methods of manufacturing a magnetoresistive random access memory device (2016-04-05),
3. 9159767 - Methods of manufacturing magnetoresistive random access memory devices (2015-10-13),
4. 8847342 - Magnetic device and method of manufacturing the same (2014-09-30),
5. 8823119 - Magnetic device having a metallic glass alloy (2014-09-02),
6. 7586808 - Memory device for use in high-speed block pipelined reed-solomon decoder, method of accessing the memory device, and reed-solomon decoder having the memory device (2009-09-08),
7. 7266748 - Method and apparatus for correcting C1/PI word errors using error locations detected by EFM/EFM+ decoding (2007-09-04),
8. 7215615 - Minimum delay buffering method, minimum delay buffer device for dynamic write strategy, and CD-RW/DVD-RW system having the same (2007-05-08),
9. 7055087 - Memory device for use in high-speed block pipelined Reed-Solomon decoder, method of accessing the memory device, and Reed-Solomon decoder having the memory device (2006-05-30),
10. 6574771 - Galios field processor having dual parallel data path for Bose Chaudhuri Hocquenghem/Reed-Solomon decoder (2003-06-03),

Title: Hyung-joon Kwon: Innovator in Magnetic Devices

Introduction

Hyung-joon Kwon is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of magnetic devices, holding a total of 10 patents. His work focuses on innovative methods of manufacturing advanced magnetic technologies.

Latest Patents

One of his latest patents involves magnetic devices and methods of manufacturing the same. This patent describes a stack structure that includes at least one magnetic layer, which is etched using an etching gas containing at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas. Another notable patent pertains to the manufacturing of magnetoresistive random access memory (MRAM) devices. This method outlines the sequential formation of a first sacrificial layer, an etch stop layer, and a second sacrificial layer on a substrate, followed by partial etching to create openings. The process includes forming lower electrodes, removing sacrificial layers, and creating magnetic tunnel junction (MTJ) structures.

Career Highlights

Hyung-joon Kwon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of magnetic technology. His innovative approaches have positioned him as a key figure in the development of next-generation memory devices.

Collaborations

He has collaborated with notable coworkers, including Jong-Chul Park and Il-man Bae, contributing to various projects that enhance the capabilities of magnetic devices.

Conclusion

Hyung-joon Kwon's work in the field of magnetic devices showcases his dedication to innovation and technology. His patents reflect a deep understanding of manufacturing processes that are crucial for advancing modern electronics.

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