The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Feb. 18, 2014
Jong-chul Park, Seongnam-si, KR;
Gwang-hyun Baek, Seoul, KR;
Hyung-joon Kwon, Seongnam-si, KR;
In-ho Kim, Suwon-si, KR;
Chang-woo Sun, Hwaseong-si, KR;
Jong-Chul Park, Seongnam-si, KR;
Gwang-Hyun Baek, Seoul, KR;
Hyung-Joon Kwon, Seongnam-si, KR;
In-Ho Kim, Suwon-si, KR;
Chang-Woo Sun, Hwaseong-si, KR;
Abstract
In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.