IDiyas

For the Inventor, By the Inventor

Seongnam-si, South Korea

Hyun Jun Yoon

USPTO Granted Patents = 14 

Average Co-Inventor Count = 2.8

ph-index = 5

Forward Citations = 378(Granted Patents)


Location History:

  • Seongnam-si, KR (2013 - 2016)
  • Changwon-si, KR (2019 - 2021)

Company Filing History:

goldMedal14 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2013-2021

Loading Chart...
14 patents (USPTO):Explore Patents
1. 11031071 - Nonvolatile memory device, operating method of nonvolatile memory device, and storage device including nonvolatile memory device (2021-06-08),
2. 11017841 - Nonvolatile memory device, operating method of nonvolatile memory device, and storage device including nonvolatile memory device (2021-05-25),
3. 10910080 - Nonvolatile memory device configured to adjust a read parameter based on degradation level (2021-02-02),
4. 10665312 - Nonvolatile memory device configured to adjust a read parameter based on a degradation level (2020-05-26),
5. 10210936 - Nonvolatile memory device and a method of reading the same (2019-02-19),
6. 9520168 - Nonvolatile memory devices, memory systems and related control methods (2016-12-13),
7. 9406394 - Flash memory device using adaptive program verification scheme and related method of operation (2016-08-02),
8. 9368166 - Nonvolatile memory devices, memory systems, and control methods using simultaneous recovery and output operations (2016-06-14),
9. 9318191 - Programming nonvolatile memory device using program voltage with variable offset between programming state distributions (2016-04-19),
10. 9251904 - Nonvolatile memory device and memory system including the same (2016-02-02),
11. 9202587 - Nonvolatile memory device, memory system comprising same, and method of programming same (2015-12-01),
12. 9117536 - Method for operating non-volatile memory device and memory controller (2015-08-25),
13. 9076534 - Flash memory device using adaptive program verification scheme and related method of operation (2015-07-07),
14. 8411502 - Flash memory device using adaptive program verification scheme and related method of operation (2013-04-02),

Title: Innovations of Hyun Jun Yoon in Nonvolatile Memory Devices

Introduction

Hyun Jun Yoon is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 14 patents. His work has been instrumental in advancing technology in this area, particularly through his latest innovations.

Latest Patents

Yoon's recent patents include a nonvolatile memory device, an operating method for such devices, and a storage device that incorporates nonvolatile memory technology. One of his notable inventions features a memory cell region with first metal pads and a memory cell array, alongside a peripheral circuit region that includes second metal pads. This design allows for efficient control of voltages through row decoder circuitry and page buffer circuitry, which are connected to the memory cells via word and bit lines. The page buffer circuitry is designed to perform sensing operations that yield first and second values, which can be inverted, enhancing the functionality of the memory device.

Career Highlights

Hyun Jun Yoon is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His expertise and dedication have positioned him as a key figure in the development of advanced memory solutions.

Collaborations

Yoon has collaborated with notable colleagues, including Kitae Park and Dongkyo Shim, contributing to a dynamic team focused on pushing the boundaries of memory technology.

Conclusion

Hyun Jun Yoon's contributions to nonvolatile memory devices reflect his commitment to innovation and excellence in technology. His patents and collaborative efforts continue to shape the future of memory solutions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…