The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Nov. 25, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Hyun Jun Yoon, Seongnam-si, KR;
Jaeyong Jeong, Yongin-si, KR;
Myung-Hoon Choi, Suwon-si, KR;
Kitae Park, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeoggi-do, KR;
Abstract
An operating method for a non-volatile memory device includes applying first and second read voltages to a first word line to perform a read operation; counting first memory cells each having a threshold voltage belonging to a first voltage range between the first read voltage and the second read voltage; applying a third read voltage to the first word line sequentially after applying the second read voltage to count second memory cells each having a second threshold voltage belonging to a voltage range between the second read voltage and the third read voltage; comparing the number of first memory cells counted and the number of second memory cells counted; determining a fourth read voltage based on a result of the comparing; and applying the fourth read voltage to the first word line sequentially after applying the third read voltage.