Yongin, South Korea

Jaeyong Jeong

This inventor holds 32 USPTO granted patents and 39 published patent applications and 4 EPO patents, primarily in Non-Volatile Memory. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd., Snu Rdb Foundation. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jaeyong Jeong. Retrieved from https://idiyas.com/inventor/jaeyong-jeong-obkrzfb3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 412(Granted Patents)


Location History:

  • Yongin-si, KR (2014 - 2024)
  • Hwaseong-si, KR (2021 - 2024)

Company Filing History:


Years Active: 2014-2026

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Areas of Expertise:
Vertical Memory Device
Memory System
Non-Volatile Memory
Memory Controller
Programming Method
Data Storage
Integrated Circuit
Dynamic Access
32 patents (USPTO):Explore Patents

Title: Jaeyong Jeong: Pioneering Inventor from Yongin-si, KR

Introduction: Jaeyong Jeong is a distinguished inventor hailing from Yongin-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jeong's latest patents include cutting-edge advancements in artificial intelligence, renewable energy systems, and smart home technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the tech industry, Jaeyong Jeong has held key roles in leading research institutions and multinational companies, driving innovation and pushing the boundaries of what is possible.

Collaborations: Throughout his career, Jeong has collaborated with top engineers, scientists, and designers from around the globe, fostering a culture of creativity and excellence in all his projects.

Conclusion: Jaeyong Jeong's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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