The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Aug. 13, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Doohyun Kim, Ansan-Si, KR;
Hyun Jun Yoon, Seongnam-Si, KR;
Donghun Kwak, Hwaseong-Si, KR;
Kitae Park, Seongnam-Si, KR;
Changyeon Yu, Yongin-Si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A nonvolatile memory device may include a memory cell array which is arranged in rows and columns and has multi-level memory cells; a voltage generator providing a plurality of read voltages to a selected row of the memory cell array; and control logic performing a plurality of page read operations using the read voltages. A first read voltage and a second read voltage among the plurality of read voltages are each associated with a higher probability of occurrence of a bit read error than at least one other read voltage among the plurality of read voltages. The control logic uses the first read voltage and the second read voltage in different page read operations than each other.