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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9318191 B1

PDFFull Text
Date of Patent:
Apr. 19, 2016

Filed:

Aug. 19, 2013

Programming nonvolatile memory device using program voltage with variable offset between programming state distributions

Applicants:

Dong-hun Kwak, Hwaseong-si, KR;

Hyun-wook Park, Hwaseong-si, KR;

Hyun Jun Yoon, Seongnam-si, KR;

Doohyun Kim, Ansan-si, KR;

Ki-tae Park, Seongnam-si, KR;

Inventors:

Dong-Hun Kwak, Hwaseong-si, KR;

Hyun-Wook Park, Hwaseong-si, KR;

Hyun Jun Yoon, Seongnam-si, KR;

Doohyun Kim, Ansan-si, KR;

Ki-Tae Park, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Volentine & Whitt, PLLC

Primary Examiner:

Richard Elms

Assistant Examiner:

Ajay Ojha

Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/12 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2006.01); G11C 29/02 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/00 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/12 (2013.01); G11C 16/3459 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); H01L 27/1157 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); G11C 16/00 (2013.01); G11C 16/10 (2013.01); G11C 16/3454 (2013.01); G11C 2029/0409 (2013.01);
Abstract

A method of programming a nonvolatile memory device comprises applying at least one test program pulse to selected memory cells located in a scan read area, performing a scan read operation on the selected memory cells following application of the at least one test program pulse to detect at least one one-shot upper cell, calculating an offset voltage corresponding to a scan read region at which the scan read operation is performed, setting a program start bias using the offset voltage, and executing at least one program loop using the program start bias.

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