Seongnam, South Korea

Hyeongsun Hong

This inventor holds 20 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyeongsun Hong. Retrieved from https://idiyas.com/inventor/hyeongsun-hong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 6.6

ph-index = 7

Forward Citations = 118(Granted Patents)


Company Filing History:


Years Active: 2013-2023

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Areas of Expertise:
Semiconductor Memory Devices
Magnetic Memory Device
Vertical Channel Transistors
Dual-Gate Electrode Structures
Recessed Active Region
Fabrication Methods
Active Region Structures
Transistor Technologies
20 patents (USPTO):Explore Patents

Title: Hyeongsun Hong: Innovator in Semiconductor Memory Devices

Introduction

Hyeongsun Hong is a distinguished inventor based in Seongnam-si, South Korea, recognized for his significant contributions to the field of semiconductor memory technology. With an impressive portfolio of 20 patents, he has structured innovative solutions that enhance memory device performance and efficiency.

Latest Patents

One of Hyeongsun Hong's latest inventions focuses on semiconductor memory devices. His innovative design includes a stack structure featuring multiple layers vertically stacked on a substrate. Each layer comprises a first dielectric layer, semiconductor layer, and second dielectric layer, organized sequentially. Crucially, the device incorporates a first conductive line extending in a designated direction and a second conductive line that penetrates vertically through the stack. An essential component of this invention is the capacitor situated within the stack and distanced from the second conductive line. The design strategically integrates semiconductor patterns extending in a different direction, enhancing connectivity between the capacitor's first electrode and the semiconductor patterns.

Another notable memory device developed by Hyeongsun includes vertically stacked memory cell transistors on a substrate, with a first and second conductive line linked to the source and gate electrodes, respectively. This innovation efficiently connects to a data storage element tied to the drain of the transistors, showcasing Hyeongsun's expertise in optimizing semiconductor structures for enhanced functionality.

Career Highlights

Hyeongsun Hong has made significant advancements in his field during his tenure at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His commitment to innovation has led to notable achievements that influence both the industry and practical applications of memory devices.

Collaborations

Throughout his career, Hyeongsun has collaborated with prominent figures in the tech industry, including coworkers Yoosang Hwang and Bong-Soo Kim. These partnerships have fostered a creative environment, leading to groundbreaking developments in semiconductor memory technologies.

Conclusion

Hyeongsun Hong stands out as a pioneer in semiconductor innovation, driving the development of advanced memory devices through his patent portfolio and collaborative efforts. His ongoing research promises to further enhance the capabilities of memory technology, ensuring that he remains a key player in the evolution of this vital industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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