The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Oct. 22, 2013
Applicants:

Bongsoo Kim, Yongin-si, KR;

Junghwan Park, Seoul, KR;

Sungkwan Choi, Hwaseong-si, KR;

Kyuhyun Lee, Hwaseong-Si, KR;

Hyeongsun Hong, Seongnam-si, KR;

Yoosang Hwang, Suwon-si, KR;

Inventors:

Bongsoo Kim, Yongin-si, KR;

Junghwan Park, Seoul, KR;

Sungkwan Choi, Hwaseong-si, KR;

Kyuhyun Lee, Hwaseong-Si, KR;

HyeongSun Hong, Seongnam-si, KR;

Yoosang Hwang, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 27/10855 (2013.01); H01L 27/10888 (2013.01); H01L 29/4236 (2013.01); H01L 27/10876 (2013.01);
Abstract

Semiconductor devices are provided. Each of the semiconductor devices may include a substrate including an active region that includes first and second regions. Each of the semiconductor devices may include a device isolation layer between the first and second regions of the active region. Each of the semiconductor devices may include a contact hole defined by recessed portions of the device isolation layer and the first region of the active region, respectively. Moreover, a topmost surface of the first region of the active region may define a bottommost portion of the contact hole. Related methods of forming semiconductor devices are also provided.


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