The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

May. 22, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Sungwoo Kim, Hwaseong-si, KR;

Bong-Soo Kim, Yongin-si, KR;

Youngbae Kim, Seoul, KR;

Kijae Hur, Seoul, KR;

Gwanhyeob Koh, Seoul, KR;

Hyeongsun Hong, Seongnam-si, KR;

Yoosang Hwang, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/108 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10897 (2013.01); H01L 27/10808 (2013.01); H01L 27/10823 (2013.01); H01L 27/222 (2013.01); H01L 27/2436 (2013.01);
Abstract

A semiconductor device including: a first memory section, a first peripheral circuit section, and a second peripheral circuit section on a substrate; a second memory section on the second peripheral circuit section; and a wiring section between the second peripheral circuit section and the second memory section, the first memory section includes a plurality of first memory cells, the first memory cells each including a cell transistor and a capacitor connected to the cell transistor, the second memory section includes a plurality of second memory cells, the second memory cells each including a variable resistance element and a select element in series, and the wiring section includes a plurality of line patterns, at least one of the line patterns and at least one of the capacitors at the same level from the substrate, the second memory cells are higher from the substrate than the at least one of the capacitors.


Find Patent Forward Citations

Loading…