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For the Inventor, By the Inventor

Seoul, South Korea

Gwanhyeob Koh

USPTO Granted Patents = 32 

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 38(Granted Patents)


Company Filing History:

goldMedal32 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2017-2025

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32 patents (USPTO):
1. 12439830 - Magnetic memory device including magnetic tunnel junction patterns with non-uniform widths (2025-10-07),
2. 12058941 - Magnetic memory device (2024-08-06),
3. 11665910 - Magnetic memory devices (2023-05-30),
4. 11659719 - Semiconductor device (2023-05-23),
5. 11557631 - Semiconductor device having first memory section and second memory section (2023-01-17),
6. 11437432 - Embedded device and method of manufacturing the same (2022-09-06),
7. 11361798 - Semiconductor device (2022-06-14),
8. 11211425 - Magnetic memory devices (2021-12-28),
9. 11121175 - Semiconductor device (2021-09-14),
10. 10897006 - Magnetic memory device and method for manufacturing the same (2021-01-19),
11. 10861902 - Semiconductor device having magnetic tunnel junction pattern (2020-12-08),
12. 10720211 - Semiconductor devices (2020-07-21),
13. 10693055 - Magnetic memory devices (2020-06-23),
14. 10580469 - Semiconductor devices (2020-03-03),
15. 10515678 - Magnetic memory devices (2019-12-24),

Title: Innovations by Gwanhyeob Koh: Pioneering Magnetic Memory Solutions

Introduction

Gwanhyeob Koh is a prominent inventor located in Seoul, South Korea, recognized for his significant contributions to the field of magnetic memory devices. With an impressive portfolio of 31 patents, Koh has established himself as a leading innovator in the electronics industry.

Latest Patents

Among Koh's latest patents are cutting-edge designs for magnetic memory devices. One of these inventions details a magnetic memory device that comprises a lower contact plug positioned on a substrate, with a data storage structure stacked upon it. This structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode. Notably, the first thickness of the lower contact plug is quantitatively defined as approximately 2.0 to 3.6 times the second thickness of the data storage structure, thereby optimizing performance and efficiency.

Additionally, he has developed another magnetic memory device featuring a magnetic tunnel junction pattern on a substrate. This design incorporates a first conductive pattern interposed between the substrate and the magnetic tunnel junction, along with lower contact plugs and second conductive patterns composed of ferromagnetic material. These innovations are critical for enhancing data storage and retrieval processes in advanced computing systems.

Career Highlights

Gwanhyeob Koh is currently affiliated with Samsung Electronics Co., Ltd., a leading global technology company known for its innovative products and solutions. Throughout his career, Koh has made noteworthy advancements in the field of magnetic memory technology, significantly influencing the direction of research and development in this area.

Collaborations

Koh has collaborated with esteemed colleagues including Kilho Lee and Yongkyu Lee. Together, they work on projects that push the boundaries of technology and contribute to the advancement of magnetic memory devices. Their collective expertise and innovative spirit foster significant breakthroughs within the industry.

Conclusion

In conclusion, Gwanhyeob Koh's pioneering work in magnetic memory devices highlights his status as a leading inventor in the technology sector. His extensive patent portfolio demonstrates his commitment to innovation and his potential to drive future advancements in electronic memory solutions. Through his contributions at Samsung Electronics Co., Ltd., Koh continues to influence the landscape of modern technology.

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