The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Sep. 22, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kilho Lee, Seoul, KR;

Gwanhyeob Koh, Seoul, KR;

Woojin Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 43/12 (2013.01);
Abstract

An embedded device includes a first insulation layer, a second insulation layer on the first insulation layer, a lower electrode contact in the first insulation layer in a first region, a first structure, having a lower electrode, a magnetic tunnel junction, and an upper electrode, in the second insulation layer and contacting the lower electrode contact, a first metal wiring structure through the first and second insulation layers in a second region, a third insulation layer on the second insulation layer, a bit line structure through the third insulation layer and the second insulation layer in the first region, the bit line structure having a first height and contacting the upper electrode, and a second metal wiring structure through the third insulation layer in the second region, the second metal wiring structure contacting the first metal wiring structure, and having a second height lower than the first height.


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