The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Apr. 14, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kilho Lee, Busan, KR;

Gwanhyeob Koh, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/22 (2006.01); G11C 11/02 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/02 (2013.01); G11C 11/5614 (2013.01);
Abstract

A semiconductor device including a substrate that has a first region and a second region, a plurality of lower conductive patterns on the substrate, the plurality of lower conductive patterns including a first conductive pattern in the first region of the substrate and a second conductive pattern in the second region of the substrate, a magnetic tunnel junction on the first conductive pattern, a contact between the magnetic tunnel junction and the first conductive pattern, a through electrode on the second conductive pattern, and a plurality of upper conductive patterns on the magnetic tunnel junction and the through electrode. The contact includes a first contact on the lower conductive patterns, a second contact on the first contact, and a first barrier layer that covers a bottom surface and a lateral surface of the second contact.


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