The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Jun. 16, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/1157 (2017.01); G11C 11/16 (2006.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 27/22 (2006.01); H01L 27/11575 (2017.01); G11C 14/00 (2006.01); G11C 5/02 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 5/025 (2013.01); G11C 11/1655 (2013.01); G11C 14/0018 (2013.01); G11C 14/0063 (2013.01); G11C 16/0483 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 27/224 (2013.01); H01L 27/2463 (2013.01); H01L 27/2481 (2013.01); G11C 2213/71 (2013.01);
Abstract
A semiconductor device includes first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.