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For the Inventor, By the Inventor

Suwon-si, South Korea

Hyang-Ja Yang

USPTO Granted Patents = 26 


Average Co-Inventor Count = 1.8

ph-index = 7

Forward Citations = 273(Granted Patents)


Location History:

  • Kyunggi-do, KR (2000)
  • Kyungki-do, KR (2000)
  • Suwon, KR (2002)
  • Kyonggi-do, KR (2004)
  • Kyuggi-do, KR (2005)
  • Suwon-shi, KR (2004 - 2006)
  • Gyeonggi-do, KR (2009 - 2011)
  • Suwon-si, KR (2006 - 2013)
  • Seoul, KR (2018 - 2019)

Company Filing History:

goldMedal26 out of 131,324 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2000-2019

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26 patents (USPTO):Explore Patents
1. 10170495 - Stacked memory device, optical proximity correction (OPC) verifying method, method of designing layout of stacked memory device, and method of manufacturing stacked memory device (2019-01-01),
2. 10140415 - Method and system for verifying layout of integrated circuit including vertical memory cells (2018-11-27),
3. 8547766 - Area-efficient data line layouts to suppress the degradation of electrical characteristics (2013-10-01),
4. 8279703 - Sub-word line driver circuit and semiconductor memory device having the same (2012-10-02),
5. 8143672 - Semiconductor device including a metal layer having a first pattern and a second pattern which together form a web structure, thereby providing improved electrostatic discharge protection (2012-03-27),
6. 8050125 - Bit line sense amplifier of semiconductor memory device having open bit line structure (2011-11-01),
7. 7999297 - Semiconductor device having stacked decoupling capacitors (2011-08-16),
8. 7924604 - Stacked memory cell for use in high-density CMOS SRAM (2011-04-12),
9. 7889532 - Bit line sense amplifier of semiconductor memory device having open bit line structure (2011-02-15),
10. 7808852 - Semiconductor memory device and layout method thereof (2010-10-05),
11. 7751273 - Layout structure of sub-world line driver and forming method thereof (2010-07-06),
12. 7639556 - Bit line sense amplifier of semiconductor memory device having open bit line structure (2009-12-29),
13. 7564134 - Circuit wiring layout in semiconductor memory device and layout method (2009-07-21),
14. 7525173 - Layout structure of MOS transistors on an active region (2009-04-28),
15. 7436078 - Line layout structure of semiconductor memory device (2008-10-14),

Title: Hyang-Ja Yang: A Pioneer in Memory Device Innovations

Introduction: Hyang-Ja Yang, based in Suwon-si, South Korea, is an accomplished inventor known for his significant contributions to the field of memory devices. With a remarkable portfolio of 26 patents, Yang has been at the forefront of innovations that enhance memory technologies, particularly in integrated circuits.

Latest Patents: Among his latest patents are groundbreaking technologies such as a stacked memory device and a method for optical proximity correction (OPC) verifying. The OPC verifying method involves checking the first location of a pattern in a stacked memory layout, calculating shift values, and determining the necessity of OPC. Additionally, he has developed methods for designing and manufacturing stacked memory devices. Another notable patent pertains to a method and system for verifying layouts of integrated circuits that employ vertical memory cells, which highlights his expertise in complex memory architectures.

Career Highlights: Hyang-Ja Yang has made significant advancements while working with major technology companies, notably Samsung Electronics Co., Ltd. His work has been pivotal in developing innovative solutions in the competitive field of memory technology, reflecting his dedication to enhancing electronic performance and efficiency.

Collaborations: Throughout his career, Yang has collaborated with esteemed professionals, including Chul-Sung Park and Yong-Hwan Noh. These collaborations have facilitated the exchange of ideas and innovations, further driving advancements in integrated circuit technologies.

Conclusion: Hyang-Ja Yang's contributions to the field of memory devices and integrated circuits showcase his status as a leading inventor in the industry. With a strong portfolio of patents and collaborative experiences, he continues to push the boundaries of what is possible in memory technology, making a lasting impact on future innovations.

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