Huijuan Cheng

Title: Huijuan Cheng: Innovator in Semiconductor Technology

Introduction

Huijuan Cheng is a prominent inventor based in Shanghai, China. She has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. Her innovative work has paved the way for advancements in electronic devices and systems.

Latest Patents

Among her latest patents is a semiconductor device that features a P-type substrate and an N-well within it. This device includes a first N+ diffusion region and a first P+ diffusion region located in the N-well. Additionally, a second P+ diffusion region is positioned across the boundary between the P-type substrate and the N-well. The design incorporates a first gate electrode that overlies the N-well and a second gate electrode that overlaps the P-type substrate. This configuration allows for the formation of an SCR (Silicon-Controlled Rectifier) device and a PMOS transistor. Another notable patent is an ESD clamp circuit, which consists of a power supply, ground supply, and an ESD detection transistor, among other components. This circuit is designed to protect electronic devices from electrostatic discharge.

Career Highlights

Huijuan Cheng has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. Her experience in these organizations has contributed to her expertise and innovative capabilities in semiconductor technology.

Collaborations

Throughout her career, Huijuan has collaborated with notable colleagues, including Hongwei Li and Lei Zhong. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Huijuan Cheng's contributions to semiconductor technology are noteworthy, and her patents reflect her innovative spirit. Her work continues to influence the field, making her a significant figure in the world of inventions and technology.