The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Dec. 08, 2011
Applicants:

Kai Zhu, Beijing, CN;

Huijuan Cheng, Beijing, CN;

Jie Chen, Beijing, CN;

Zhiguang Guo, Beijing, CN;

Hongwei LI, Beijing, CN;

Inventors:

Kai Zhu, Beijing, CN;

Huijuan Cheng, Beijing, CN;

Jie Chen, Beijing, CN;

Zhiguang Guo, Beijing, CN;

Hongwei Li, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ESD protection circuit and method for its use are provided. The circuit comprising: a discharge path formed by first and second NMOS transistors which are sequentially connected between a ground and a power supply; an ESD event detection unit; first and second drive units respectively connected between an output of the ESD event detection unit and a gate of the first transistor and between the output of the ESD event detection unit and a gate of the second transistor. The first and second drive units respectively cause the first and second transistors to be turned on during an ESD event and to be turned off when there is no ESD event.


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