This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Fujian Jinhua Integrated Circuit Co., Ltd., United Microelectronics Corp.. Active years: 2021.
Company Filing History:
1 out of 354 
1 out of 7,269 
Years Active: 2021
Title: Huai-Jin Hsing: Innovator in Flash Memory Technology
Introduction
Huai-Jin Hsing is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of flash memory structures. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.
Latest Patents
Hsing holds a patent for a "DRAM and flash structure and method of fabricating the same." This invention includes a substrate comprising an active region and two electron storage structures located on either side of the active region. Each electron storage structure consists of a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, which consists solely of a control gate and a gate dielectric layer formed from a single material. Additionally, two source/drain doping regions are positioned in the active region adjacent to the buried gate. This innovative design enhances the efficiency and performance of flash memory devices.
Career Highlights
Throughout his career, Huai-Jin Hsing has worked with prominent companies in the semiconductor industry. He has been associated with Fujian Jinhua Integrated Circuit Co., Ltd. and United Microelectronics Corporation, where he has contributed to various projects and advancements in technology. His experience in these organizations has helped him refine his skills and knowledge in the field.
Collaborations
Hsing has collaborated with several talented individuals during his career. Notable coworkers include Shih-Kuei Yen and Hung-Lin Shih, who have also made significant contributions to the field of semiconductor technology. Their collective efforts have fostered innovation and progress in the industry.
Conclusion
Huai-Jin Hsing is a distinguished inventor whose work in flash memory technology has made a lasting impact. His patent and collaborations reflect his commitment to advancing semiconductor technology. Hsing's contributions continue to influence the field and inspire future innovations.