The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Sep. 28, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Shih-Kuei Yen, Tainan, TW;
Li-Wei Liu, Kaohsiung, TW;
Le-Tien Jung, Tainan, TW;
Hung-Lin Shih, Hsinchu, TW;
Hsuan-Tung Chu, Tainan, TW;
Ming-Che Li, New Taipei, TW;
Guan-Yi Liou, Chiayi County, TW;
Huai-Jin Hsing, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A flash includes a substrate comprising an active region and two electron storage structures disposed at two sides of the active region, wherein each of the electron storage structures comprises a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, wherein the buried gate only consists of a control gate and a gate dielectric layer, and the gate dielectric layer is formed by a single material. Two source/drain doping regions are disposed in the active region at two sides of the buried gate.