United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Huai-Jin Hsing

Hung-Lin Shih

Le-Tien Jung

Li-Wei Liu

Hsuan-Tung Chu

Shih-Kuei Yen

Ming-Che Li

Guan-Yi Liou

A flash includes a substrate comprising an active region and two electron storage structures disposed at two sides of the active region, wherein each of the electron storage structures comprises a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, wherein the buried gate only consists of a control gate and a gate dielectric layer, and the gate dielectric layer is formed by a single material. Two source/drain doping regions are disposed in the active region at two sides of the buried gate.

DRAM and flash structure and method of fabricating the same

Growing community of inventors

Taichung, Taiwan

Huai-Jin Hsing