Hsing-Yuan Huang

Title: Hsing-Yuan Huang: Innovator in Semiconductor Technology

Introduction

Hsing-Yuan Huang is an inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Hsing-Yuan Huang's recent patent applications include:

1. **DUMMY DIES AND METHOD OF FORMING THE SAME** - This application provides a dummy die with improved thermal conductivity and warpage control. The dummy die includes an adjustment layer formed over a semiconductor substrate. The adjustment layer has a thermal conductivity in a range between about 30 W/mK and about 100 W/mK. The adjustment layer may include silicon nitride or silicon carbide.

2. **METHODS OF FORMING BONDING STRUCTURES** - This method includes forming a conductive pad over a substrate, forming a multi-layer passivation structure on the conductive pad, and patterning a top portion of the multi-layer passivation structure to create openings for bonding structures. The process involves multiple etching steps and the use of different etchants to achieve the desired results.

Conclusion

Hsing-Yuan Huang is an innovative inventor whose work in semiconductor technology showcases his potential in the field. His latest patent applications reflect his commitment to advancing technology and improving existing methods.