Hsin-Wei Lee

Title: Hsin-Wei Lee: Innovator in Micro Light-Emitting Diode Technology

Introduction

Hsin-Wei Lee is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of micro light-emitting diode (LED) technology, holding a total of 17 patents. His innovative designs and advancements have paved the way for new applications in various industries.

Latest Patents

Among his latest patents, Hsin-Wei Lee has developed a micro light-emitting diode device that includes a substrate, a micro light-emitting diode, an isolation layer, and a cathode transparent electrode. This device features a p-type III-nitride layer and n-type III-nitride layers that are sequentially stacked, with an active layer positioned between them. The design ensures that the top layer and the next layer in contact with each other contain aluminum, enhancing the device's performance. Another notable patent involves a micro light-emitting diode device that comprises a substrate, a micro light-emitting diode, and a transparent top electrode. This design utilizes a p-type GaN layer and an n-type GaN layer, along with an n-doped AlGaN layer, optimizing the refractive indices for improved efficiency.

Career Highlights

Hsin-Wei Lee has worked with several companies, including Mikro Mesa Technology Co., Ltd. and Mesa Technology Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technologies in the field of micro LEDs.

Collaborations

Throughout his career, Hsin-Wei Lee has collaborated with talented individuals such as Li-Yi Chen and Pei-Yu Chang. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Hsin-Wei Lee's contributions to micro light-emitting diode technology demonstrate his expertise and commitment to innovation. His patents reflect a deep understanding of materials and design, positioning him as a key figure in the advancement of this technology.