The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Mar. 06, 2017
Mikro Mesa Technology Co., Ltd., Apia, WS;
Li-Yi Chen, Tainan, TW;
Pei-Yu Chang, Tainan, TW;
Hsin-Wei Lee, Tainan, TW;
Chun-Yi Chang, Tainan, TW;
Shih-Chyn Lin, Tainan, TW;
MIKRO MESA TECHNOLGY CO., LTD., Apia, WS;
Abstract
A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.