The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Oct. 04, 2015
Mikro Mesa Technology Co., Ltd., Apia, WS;
Li-Yi Chen, Tainan, TW;
Pei-Yu Chang, Tainan, TW;
Chih-Hui Chan, Tainan, TW;
Chun-Yi Chang, Tainan, TW;
Shih-Chyn Lin, Tainan, TW;
Hsin-Wei Lee, Tainan, TW;
MIKRO MESA TECHNOLOGY CO., LTD., Apia, WS;
Abstract
A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.