The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 12, 2015
Applicant:

Mikro Mesa Technology Co., Ltd., Apia, WS;

Inventors:

Li-Yi Chen, Tainan, TW;

Pei-Yu Chang, Tainan, TW;

Chih-Hui Chan, Tainan, TW;

Chun-Yi Chang, Tainan, TW;

Shih-Chyn Lin, Tainan, TW;

Hsin-Wei Lee, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/44 (2010.01); H01L 23/00 (2006.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 24/83 (2013.01); H01L 33/145 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 25/0753 (2013.01); H01L 2224/83191 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.


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