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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsiaokang Chang

This inventor holds 11 USPTO granted patents and 6 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiaokang Chang. Retrieved from https://idiyas.com/inventor/hsiaokang-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 100.0

Average Co-Inventor Count = 5.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal11 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2023-2025

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11 patents (USPTO):Explore Patents
1. 12484310 - Semiconductor device structure and methods of forming the same (2025-11-25),
2. 12412780 - Semiconductor device structure and methods of forming the same (2025-09-09),
3. 12381113 - Semiconductor device structure having air gap and methods of forming the same (2025-08-05),
4. 12230537 - Semiconductor device structure having air gap and methods of forming the same (2025-02-18),
5. 12205946 - Semiconductor device structure and methods of forming the same (2025-01-21),
6. 12132000 - Semiconductor device structure and methods of forming the same (2024-10-29),
7. 12074060 - Semiconductor device structure and methods of forming the same (2024-08-27),
8. 12068248 - Semiconductor interconnection structure and methods of forming the same (2024-08-20),
9. 12033889 - Semiconductor device structure and methods of forming the same (2024-07-09),
10. 11923357 - Semiconductor device structure and methods of forming the same (2024-03-05),
11. 11557511 - Semiconductor device structure and methods of forming the same (2023-01-17),

Title: Hsiaokang Chang: Innovator in Semiconductor Technology

Introduction

Hsiaokang Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on developing advanced semiconductor device structures and methods that enhance performance and efficiency.

Latest Patents

Among his latest patents, Hsiaokang Chang has developed a semiconductor device structure that includes an interfacial structure. This structure features a first interfacial layer with a first dielectric layer, a first conductive feature, and a first thermal conductive layer. Additionally, a second interfacial layer, which mirrors the first, is included to improve the overall functionality of the device. Another notable patent describes an interconnection structure that comprises a dielectric layer, conductive features, and barrier layers, designed to optimize the performance of semiconductor devices.

Career Highlights

Hsiaokang Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key player in the development of cutting-edge technologies that drive the industry forward.

Collaborations

Hsiaokang Chang has collaborated with notable colleagues, including Cheng-Chin Lee and Shao-Kuan Lee. These partnerships have fostered a collaborative environment that enhances the innovation process within the company.

Conclusion

Hsiaokang Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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