Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsiaokang Chang

Shau-Lin Shue

Hsin-Yen Huang

Shao-Kuan Lee

Cheng-Chin Lee

Chi-Lin Teng

Ting-Ya Lo

Cherng-Shiaw Tsai

Kuang-Wei Yang

Kai-Fang Cheng

An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.

Semiconductor device structure and methods of forming the same

An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first portion and a second portion adjacent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature. The structure further includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a support layer in contact with the first and second barrier layers. An air gap is located between the first and second barrier layers, and the dielectric layer and the support layer are exposed to the air gap.

An interconnect structure is provided. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, a capping layer having a first portion, a second portion opposing the first portion, and a third portion connecting the first portion and the second portion, wherein the third portion is in contact with the dielectric layer. The structure also includes a support layer in contact with the first and second portions of the capping layer, a first conductive layer disposed over the first conductive feature, a second conductive layer disposed over the dielectric layer, and a two-dimensional (2D) material layer in contact with a top surface of the first conductive layer, wherein the support layer, the first portion, the second portion, and the third portion define an air gap, and the air gap is disposed between the first conductive layer and the second conductive layer.

Semiconductor device structure having air gap and methods of forming the same

A method for forming an interconnect structure includes forming a first conductive layer over a dielectric layer, forming one or more openings in the first conductive layer to expose portions of dielectric surface of the dielectric layer and conductive surfaces of the first conductive layer, wherein the one or more openings separates the first conductive layer into one or more portions. The method includes forming a capping layer on exposed portions of the dielectric surface of the dielectric layer and conductive surface of the first conductive layer, forming a sacrificial layer in the one or more openings, recessing the sacrificial layer, forming a support layer on the recessed sacrificial layer in each of the one or more openings, removing the sacrificial layer to form an air gap in each of the one or more openings, forming a dielectric fill on the support layer, replacing the first conductive layer in the one or more openings with a second conductive layer, selectively forming a two-dimensional (2D) material layer on the second conductive layer, forming a first etch stop layer on the dielectric fill and the support layer, forming a second etch stop layer on the first etch stop layer and the 2D material layer, forming a dielectric material on the second etch stop layer, forming a contact opening through the dielectric material, the second etch stop layer, and the 2D material layer to expose a top surface of the second conductive layer, and forming a first conductive feature in the contact opening.

An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, a second conductive feature disposed over the first conductive feature, a third conductive feature disposed adjacent the second conductive feature, a first dielectric material disposed between the second and third conductive features, a first one or more graphene layers disposed between the second conductive feature and the first dielectric material, and a second one or more graphene layers disposed between the third conductive feature and the first dielectric material.

An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature, a first liner having a first top surface disposed on the first conductive feature, a second conductive feature disposed adjacent the first conductive feature, and a second liner disposed on at least a portion of the second conductive feature. The second liner has a second top surface, and the first liner and the second liner each comprises a two-dimensional material. The structure further includes a first dielectric material disposed between the first and second conductive features and a dielectric layer disposed on the first dielectric material. The dielectric layer has a third top surface, and the first, second, and third top surfaces are substantially co-planar.

An interconnect structure includes a dielectric layer, a conductive feature, a conductive layer, a capping layer, a support layer and an etch stop layer. The conductive feature is disposed in the dielectric layer. A first portion of the conductive layer is disposed over the first conductive feature, and a second portion of the conductive layer is disposed over the dielectric layer. A first portion of the capping layer is in contact with the first portion of the conductive layer, a second portion of the capping layer is in contact with the second portion of the conductive layer, and a third portion of the capping layer is in contact with the dielectric layer. An air gap is defined by the support layer and the capping layer. The etch stop layer is disposed over the second portion of the conductive layer, the second portion of the capping layer and the support layer.

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Hsinchu, Taiwan

Hsiaokang Chang