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For the Inventor, By the Inventor

Boise, ID, United States of America

Hongbin Zhu

USPTO Granted Patents = 49 

 

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 190(Granted Patents)


Company Filing History:

goldMedal41 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal7 out of 54,664 
 
Intel Corporation
 patents
bronzeMedal1 out of 2 
 
Intel Corporatino
 patents

Years Active: 2009-2025

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49 patents (USPTO):
1. 12279420 - Memory having a continuous channel (2025-04-14),
2. 12052863 - Memory circuitry comprising a vertical string of memory cells and a conductive via and method used in forming a vertical string of memory cells and a conductive via (2024-07-30),
3. 11949022 - Three dimensional memory (2024-04-02),
4. 11626424 - Semiconductor devices and methods of fabrication (2023-04-11),
5. 11315941 - Memory having a continuous channel (2022-04-26),
6. 11289611 - Three dimensional memory (2022-03-29),
7. 11088168 - Semiconductor devices and methods of fabrication (2021-08-10),
8. 11018155 - Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure (2021-05-25),
9. 11018097 - Electronic component guard ring (2021-05-25),
10. 10943920 - Methods of fabricating integrated structures (2021-03-09),
11. 10879259 - Methods and apparatuses having memory cells including a monolithic semiconductor channel (2020-12-29),
12. 10707121 - Solid state memory device, and manufacturing method thereof (2020-07-07),
13. 10665599 - Integrated structures and methods of forming vertically-stacked memory cells (2020-05-26),
14. 10651315 - Three dimensional memory (2020-05-12),
15. 10622374 - Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure (2020-04-14),

Title: The Innovative Journey of Hongbin Zhu

Introduction:

Hongbin Zhu, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Hongbin Zhu holds several patents in the areas of renewable energy technologies, smart devices, and sustainable materials, showcasing his diverse range of expertise and creativity.

Career Highlights:

With a background in engineering and a passion for problem-solving, Hongbin Zhu has successfully developed cutting-edge solutions that have garnered attention in the industry. His commitment to pushing the boundaries of innovation is evident in the quality of his work.

Collaborations:

Throughout his career, Hongbin Zhu has collaborated with leading research institutions and technology companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion:

In conclusion, Hongbin Zhu stands out as a visionary inventor who continues to drive positive change through his innovative creations. His dedication to shaping a better future through technology sets him apart as a true pioneer in his field.

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