Hong-Ru Liu

Title: Innovations of Hong-Ru Liu

Introduction

Hong-Ru Liu is a notable inventor based in Chiayi County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on memory cell designs and semiconductor memory devices, showcasing his expertise in advanced electronic components.

Latest Patents

One of his latest patents is a memory cell that includes a curved gate channel transistor, a buried bit line, a word line, and a capacitor. The design features a first doped region located in a substrate, with a second and third doped region positioned adjacent to it, forming a curved gate channel. The buried bit line is situated below the first doped region, while the word line covers the second doped region. Additionally, the capacitor is positioned above the curved gate channel transistor and is in electrical contact with the third doped region. Another significant patent is for a semiconductor memory device that comprises a semiconductor substrate, multiple word lines, and bit lines. The word lines are arranged parallel to each other and overlap with active areas on the substrate, while the bit lines cross the word lines at an angle greater than 0 degrees and less than 90 degrees.

Career Highlights

Throughout his career, Hong-Ru Liu has worked with prominent companies in the semiconductor industry, including United Microelectronics Corporation and Fujian Jinhua Integrated Circuit Co., Ltd. His experience in these organizations has contributed to his innovative developments in memory technology.

Collaborations

He has collaborated with notable coworkers such as Kuei-Hsuan Yu and Wan-Chi Wu, further enhancing his contributions to the field.

Conclusion

Hong-Ru Liu's innovative work in semiconductor technology and memory cell design has established him as a significant figure in the industry. His patents reflect a deep understanding of electronic components and their applications, contributing to advancements in technology.