The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Dec. 20, 2017
Applicants:
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Inventors:
Assignees:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10888 (2013.01); H01L 27/10805 (2013.01); H01L 27/10814 (2013.01);
Abstract
A dynamic random access memory (DRAM) includes a first bit line extending along a first direction, a first buried word line extending along a second direction, and an active region overlapping part of the first bit line and part of the first buried word line. Preferably, the active region comprises a V-shape. Moreover, the DRAM also includes at least a storage node contact overlapping one end of the active region, in which the storage node contact includes an ellipse.