Hong Q Hou

Title: Innovations of Hong Q Hou in Solar Cell Technology

Introduction

Hong Q Hou is a prominent inventor based in Albuquerque, NM (US). He has made significant contributions to the field of solar cell technology, holding a total of 11 patents. His work focuses on enhancing the efficiency and fabrication methods of multijunction solar cells.

Latest Patents

One of his latest patents is titled "Multijunction solar cell with two step diffusion region in substrate." This invention features a solar cell that includes a first subcell with a germanium (Ge) substrate, which has a diffusion region doped with n-type dopants such as phosphorus and arsenic. Notably, the upper portion of this diffusion region has a higher concentration of phosphorus (P) atoms compared to arsenic (As) atoms. Additionally, the second subcell consists of a layer of either gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) placed over the substrate. Another significant patent is the "Method of fabricating a multijunction solar cell." This method involves providing a substrate and depositing a nucleation first layer directly in contact with it. The process also includes depositing a second layer containing an arsenic dopant over the nucleation layer, which acts as a diffusion barrier to limit the depth of arsenic diffusion into the substrate.

Career Highlights

Throughout his career, Hong Q Hou has worked with notable companies such as Emcore Corporation and Sandia Corporation. His expertise in solar technology has positioned him as a key figure in the development of advanced solar cell solutions.

Collaborations

He has collaborated with several professionals in the field, including Mark A Stan and Nein Y Li. Their combined efforts have contributed to the advancement of solar cell technologies.

Conclusion

Hong Q Hou's innovative work in solar cell technology demonstrates his commitment to enhancing renewable energy solutions. His patents and collaborations reflect his significant impact on the industry.