The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jun. 02, 2005
Mark A. Stan, Albuquerque, NM (US);
Nein Y. LI, Sunnyvale, CA (US);
Frank A. Spadafora, Albuquerque, NM (US);
Hong Q. Hou, Albuquerque, NM (US);
Paul R. Sharps, Albuquerque, NM (US);
Navid S. Fatemi, Albuquerque, NM (US);
Mark A. Stan, Albuquerque, NM (US);
Nein Y. Li, Sunnyvale, CA (US);
Frank A. Spadafora, Albuquerque, NM (US);
Hong Q. Hou, Albuquerque, NM (US);
Paul R. Sharps, Albuquerque, NM (US);
Navid S. Fatemi, Albuquerque, NM (US);
Emcore Solar Power, Inc., Albuquerque, NM (US);
Abstract
Dopant diffusion into semiconductor material is controlled during fabrication of a semiconductor structure by depositing a nucleation layer over a first layer of the semiconductor structure and depositing a device layer containing the dopant over the nucleation layer. The nucleation layer serves as a diffusion barrier by limiting in depth the diffusion of the dopant into the first layer. The dopant can include arsenic (As).