The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2001

Filed:

Jun. 18, 1999
Applicant:
Inventors:

Albert G. Baca, Albuquerque, NM (US);

Guillermo M. Loubriel, Albuquerque, NM (US);

Alan Mar, Albuquerque, NM (US);

Fred J Zutavern, Albuquerque, NM (US);

Harold P. Hjalmarson, Albuquerque, NM (US);

Andrew A. Allerman, Albuquerque, NM (US);

Thomas E. Zipperian, Edgewood, NM (US);

Martin W. O'Malley, Edgewood, NM (US);

Wesley D. Helgeson, Albuquerque, NM (US);

Gary J. Denison, Sandia Park, NM (US);

Darwin J. Brown, Albuquerque, NM (US);

Charles T. Sullivan, Albuquerque, NM (US);

Hong Q. Hou, Albuquerque, NM (US);

Assignee:

Sandia Corporation, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 4/014 ;
U.S. Cl.
CPC ...
H01J 4/014 ;
Abstract

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.


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