Albert G Baca

Title: Innovations of Albert G Baca

Introduction

Albert G Baca is a prominent inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of wide-bandgap transistors. With a total of 11 patents to his name, Baca's work has had a substantial impact on the industry.

Latest Patents

Baca's latest patents include a regrowth method for fabricating wide-bandgap transistors and devices made thereby. This method involves the sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth occurs on the barrier layer, specifically in the access regions. Additionally, he has developed a high current density, low contact resistance contact for wide-bandgap or ultra-wide bandgap materials. This contact is lithographically formed to ensure optimal performance in high electron mobility transistors (HEMTs).

Career Highlights

Throughout his career, Albert G Baca has worked with notable organizations such as Sandia Corporation and National Technology & Engineering Solutions of Sandia, LLC. His expertise in semiconductor technology has positioned him as a leader in his field.

Collaborations

Baca has collaborated with esteemed colleagues, including Robert Kaplar and Andrew A Allerman. These partnerships have further enhanced his innovative contributions to the semiconductor industry.

Conclusion

Albert G Baca's work in the field of wide-bandgap transistors showcases his innovative spirit and dedication to advancing technology. His patents and collaborations reflect his significant role in shaping the future of semiconductor devices.