The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Jan. 06, 2016
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Matthew Marinella, Albuquerque, NM (US);

Sandeepan DasGupta, State College, PA (US);

Robert Kaplar, Albuquerque, NM (US);

Albert G. Baca, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 49/02 (2006.01); H01L 23/31 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/405 (2013.01); H01L 23/3171 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7787 (2013.01);
Abstract

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.


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