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Hitoshi Hamaguchi

USPTO Granted Patents = 4

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)

Location History:

Tokyo, JP (2017 - 2018)
Minato-ku, JP (2019)

Company Filing History:

Jsr Corporation

Years Active: 2017-2019

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4 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10392699 - Method for manufacturing structure having recessed pattern, resin composition, method for forming electroconductive film, electronic circuit, and electronic device (2019-08-27),

2. 10032920 - Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same (2018-07-24),

3. 9980392 - Process for producing substrate having wiring, radiation-sensitive composition, electronic circuit and electronic device (2018-05-22),

4. 9746775 - Method for manufacturing substrate having concave pattern, composition, method for forming conductive film, electronic circuit and electronic device (2017-08-29),

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