The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
May. 01, 2017
Jsr Corporation, Tokyo, JP;
Hitoshi Hamaguchi, Tokyo, JP;
Kenrou Tanaka, Tokyo, JP;
Kenzou Ookita, Tokyo, JP;
Keisuke Kuriyama, Tokyo, JP;
JSR Corporation, Tokyo, JP;
Abstract
The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.