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Yokohama, Japan

Hisato Oyamatsu

USPTO Granted Patents = 34 (Patent Applications = 1)

Average Co-Inventor Count = 1.5

ph-index = 9

Forward Citations = 292(Granted Patents)

Location History:

Kawasaki, JP (1995 - 1997)
Tokyo, JP (1996 - 2004)
Kanagawa-ken, JP (2003 - 2006)
Yokohama, JP (1999 - 2015)

Company Filing History:

34 out of 52,751

Kabushiki Kaisha Toshiba

Years Active: 1995-2015

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34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9041130 - Magnetic memory device (2015-05-26),

2. 8735181 - Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device (2014-05-27),

3. RE42180 - Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same (2011-02-28),

4. 7741159 - Semiconductor device having channel with cooling fluid and manufacturing method thereof (2010-06-22),

5. 7569931 - Cooling semiconductor device and manufacturing method thereof (2009-08-04),

6. 7521300 - Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate (2009-04-21),

7. 7439112 - Semiconductor device using partial SOI substrate and manufacturing method thereof (2008-10-21),

8. 7187035 - Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate (2007-03-06),

9. 7176536 - Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same (2007-02-13),

10. 7148543 - Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions (2006-12-12),

11. 7112822 - Semiconductor device using partial SOI substrate and manufacturing method thereof (2006-09-26),

12. 7098146 - Semiconductor device having patterned SOI structure and method for fabricating the same (2006-08-29),

13. 7018904 - Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same (2006-03-28),

14. 6906384 - Semiconductor device having one of patterned SOI and SON structure (2005-06-14),

15. 6861374 - Semiconductor device having patterned SOI structure and method for fabricating the same (2005-03-01),

Title: Inventor Hisato Oyamatsu: Revolutionizing Technology in Yokohama

Introduction: Hisato Oyamatsu is a visionary inventor based in Yokohama, Japan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Hisato Oyamatsu holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Oyamatsu has worked with leading tech companies in Japan, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Hisato Oyamatsu has collaborated with top research institutions and universities in Japan, fostering a culture of innovation and knowledge-sharing to drive progress in the tech industry.

Conclusion: Hisato Oyamatsu's relentless pursuit of innovation and his passion for technology continue to inspire the next generation of inventors and shape the future of technology in Yokohama and beyond.

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