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For the Inventor, By the Inventor

Yokohama, Japan

Hisato Oyamatsu

This inventor holds 34 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1995-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisato Oyamatsu. Retrieved from https://idiyas.com/inventor/hisato-oyamatsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 58.8

Average Co-Inventor Count = 1.5

ph-index = 9

Forward Citations = 292(Granted Patents)


Location History:

  • Kawasaki, JP (1995 - 1997)
  • Tokyo, JP (1996 - 2004)
  • Kanagawa-ken, JP (2003 - 2006)
  • Yokohama, JP (1999 - 2015)

Company Filing History:

goldMedal34 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1995-2015

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Areas of Expertise:
Magnetic Memory Device
Semiconductor Manufacturing
Metal Silicide Layer
Cooling Fluid Channel
Single-Crystalline Layer
Partial SOI Substrate
Multilayer Wiring Structure
MOS Transistors
High Speed Operation
Gate Electrode Pattern
STI Structure
CMP Process
34 patents (USPTO):Explore Patents
1. 9041130 - Magnetic memory device (2015-05-26),
2. 8735181 - Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device (2014-05-27),
3. RE42180 - Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same (2011-02-28),
4. 7741159 - Semiconductor device having channel with cooling fluid and manufacturing method thereof (2010-06-22),
5. 7569931 - Cooling semiconductor device and manufacturing method thereof (2009-08-04),
6. 7521300 - Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate (2009-04-21),
7. 7439112 - Semiconductor device using partial SOI substrate and manufacturing method thereof (2008-10-21),
8. 7187035 - Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate (2007-03-06),
9. 7176536 - Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same (2007-02-13),
10. 7148543 - Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions (2006-12-12),
11. 7112822 - Semiconductor device using partial SOI substrate and manufacturing method thereof (2006-09-26),
12. 7098146 - Semiconductor device having patterned SOI structure and method for fabricating the same (2006-08-29),
13. 7018904 - Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same (2006-03-28),
14. 6906384 - Semiconductor device having one of patterned SOI and SON structure (2005-06-14),
15. 6861374 - Semiconductor device having patterned SOI structure and method for fabricating the same (2005-03-01),

Title: Inventor Hisato Oyamatsu: Revolutionizing Technology in Yokohama

Introduction: Hisato Oyamatsu is a visionary inventor based in Yokohama, Japan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Hisato Oyamatsu holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Oyamatsu has worked with leading tech companies in Japan, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Hisato Oyamatsu has collaborated with top research institutions and universities in Japan, fostering a culture of innovation and knowledge-sharing to drive progress in the tech industry.

Conclusion: Hisato Oyamatsu's relentless pursuit of innovation and his passion for technology continue to inspire the next generation of inventors and shape the future of technology in Yokohama and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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