The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jan. 18, 2005
Hisato Oyamatsu, Yokohama, JP;
Hisato Oyamatsu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for fabricating a semiconductor device, including forming a first insulation film, a first semiconductor layer, and a second insulation film in sequence in first to third regions of a semiconductor substrate, removing the first insulation film, the first semiconductor layer, and the second insulation film in the first region and the second insulation film in the third region, selectively forming a second semiconductor layer in the first region of the semiconductor substrate and on the first semiconductor layer in the third region, removing the second insulation film, polishing the second semiconductor layer in the third region using the second insulation film in the second region as a stopper after the second semiconductor layer is formed, and forming semiconductor elements on the first semiconductor layer and the second semiconductor layer after the second insulation film is removed.