Hisashi Kashino

Title: Hisashi Kashino: Innovator in Semiconductor Technology

Introduction

Hisashi Kashino is a prominent inventor based in Annaka, Japan, known for his significant contributions to semiconductor technology. With a total of 4 patents to his name, Kashino has made strides in the field of vapor phase growth methods and semiconductor wafer manufacturing.

Latest Patents

Kashino's latest patents include a vapor phase growth method that controls the heat output in the gas introduction region. This innovative method allows for the growth of a semiconductor single crystal thin film on the front surface of a semiconductor single crystal substrate while introducing gas into a reaction chamber. The process involves performing heating output power control in the gas introduction region based on temperature detected in other areas of the reaction chamber. Another notable patent is a method of manufacturing semiconductor wafers, which involves mounting a single crystal silicon wafer in a pocket arranged in a susceptor. This method ensures that the contact ratio of the pocket with the silicon wafer is maintained between 0.1% and 1.1% during heat treatment.

Career Highlights

Kashino is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work has been instrumental in advancing the techniques used in semiconductor manufacturing, contributing to the efficiency and quality of semiconductor products.

Collaborations

Throughout his career, Kashino has collaborated with notable colleagues, including Koichi Kanaya and Takatoshi Nagoya. These partnerships have fostered innovation and have played a crucial role in the development of new technologies in the semiconductor field.

Conclusion

Hisashi Kashino's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the advancement of semiconductor manufacturing techniques.