The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Jul. 16, 1999
Hisashi Kashino, Annaka, JP;
Koichi Kanaya, Annaka, JP;
Shin-Etsu Handotai, Co., Ltd., Tokyo, JP;
Abstract
In the process of thin film growth, actual temperature of a substrate is measured and corrected with low cost in short time. With first thin film growth equipment of which a difference between set temperature of a heating source and an actual temperature of the substrate (hereinafter, referred to as temperature characteristic) is known, a first calibration curve representing “thin film growth rate vs. substrate actual temperature” is prepared. Next, thin film growth is conducted at one set temperature T,with use of second thin film growth equipment whose temperature characteristic is unknown, where a difference from a set temperature T,reading from the first calibration curve in correspondence to a thin film growth rate G resulting from the thin film growth process is determined. This difference is added to a set temperature T,in the diffusion controlled temperature region at which the thin film growth is actually performed, making it possible to achieve thin film growth at an accurate substrate surface temperature. The temperature characteristic of the first thin film growth equipment can be known based on a second calibration curve representing “sheet resistance vs. substrate actual temperature” prepared by using a test-use substrate by ion implantation.