Shin-Etsu Handotai Co., Ltd.

Hisashi Kashino

Hitoshi Habuka

Takatoshi Nagoya

Koichi Kanaya

A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate () while introducing gas into a reaction chamber (), has a step of performing heating output power control in a gas introduction region (R) according to a temperature detected in a region other than the gas introduction region (R) in the reaction chamber ().

Vapor phase growth method by controlling the heat output in the gas introduction region

A semiconductor wafer manufacturing method comprising mounting a single crystal silicon wafer (W) in a pocket () arranged in a susceptor (), and performing heat treatment for the single crystal silicon wafer (W) to manufacture a semiconductor wafer, wherein a contact ratio of the pocket () with the single crystal silicon wafer (W) is set to 0.1% or more and 1.1% or less.

Method of manufacturing semiconductor wafer and susceptor used therefor

In the process of thin film growth, actual temperature of a substrate is measured and corrected with low cost in short time. With first thin film growth equipment of which a difference between set temperature of a heating source and an actual temperature of the substrate (hereinafter, referred to as temperature characteristic) is known, a first calibration curve representing &ldquo;thin film growth rate vs. substrate actual temperature&rdquo; is prepared. Next, thin film growth is conducted at one set temperature T,with use of second thin film growth equipment whose temperature characteristic is unknown, where a difference from a set temperature T,reading from the first calibration curve in correspondence to a thin film growth rate G resulting from the thin film growth process is determined. This difference is added to a set temperature T,in the diffusion controlled temperature region at which the thin film growth is actually performed, making it possible to achieve thin film growth at an accurate substrate surface temperature. The temperature characteristic of the first thin film growth equipment can be known based on a second calibration curve representing &ldquo;sheet resistance vs. substrate actual temperature&rdquo; prepared by using a test-use substrate by ion implantation.

Method for correction of thin film growth temperature

In the preparation stage before the manufacturing of the single crystal thin film 13, growth conditions are determined by conducting a vapor phase growth without rotating the rotatable holder 14 on its axis and making adjustments such that the growth rate of the single crystal thin film 13 is laterally asymmetric with respect to the virtual center axis on the holder 14 parallel to the feeding direction of the source material gas 19, and then said single crystal thin film is manufactured based on said growth conditions.

Growing community of inventors

Annaka, Japan

Hisashi Kashino