The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Jun. 20, 2002
Applicant:
Hisashi Kashino, Annaka, JP;
Inventor:
Hisashi Kashino, Annaka, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate () while introducing gas into a reaction chamber (), has a step of performing heating output power control in a gas introduction region (R) according to a temperature detected in a region other than the gas introduction region (R) in the reaction chamber ().
Kashino, Hisashi. (2006). Vapor phase growth method by controlling the heat output in the gas introduction region (U.S. Patent No. 7049154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7049154
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile