Kanagawa, Japan

Hisao Hayashi

This inventor holds 52 USPTO granted patents, primarily in Thin Film Semiconductors (CPC class 357 ). Top assignees: Sony Corporation, Fujitsu Corporation, Japan Display West Inc.. Active years: 1976-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisao Hayashi. Retrieved from https://idiyas.com/inventor/hisao-hayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 86.5

Average Co-Inventor Count = 2.6

ph-index = 23

Forward Citations = 1,562(Granted Patents)

Forward Citations (Not Self Cited) = 1,551(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Atsugi, JA (1976 - 1978)
  • Yokohama, JP (1985 - 1989)
  • Shinagawa, JP (1990)
  • Atsugi, JP (1979 - 1992)
  • Aichi, JP (2003)
  • Kawasaki, JP (1997 - 2004)
  • Kanagawa, JP (1987 - 2014)

Company Filing History:


Years Active: 1976-2014

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Areas of Expertise:
Thin Film Semiconductor
Display Device
Manufacturing Method
Thin-Film Transistor
Electroluminescence
Liquid Crystal Display
Interconnection Substrate
Polycrystalline Silicon
Active-Matrix Substrate
Silicon Wafer
Semiconductor Chips
52 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hisao Hayashi: A Pioneer in Semiconductor Technology

Introduction: Hisao Hayashi, hailing from Kanagawa, Japan, is a distinguished inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio comprising 52 patents, Hayashi has made remarkable strides in the development of thin film semiconductor devices, revolutionizing the way integrated circuits are formed and utilized in modern electronics.

Latest Patents: Among his latest innovations, Hayashi's patent for a thin film semiconductor device and its corresponding manufacturing method stands out. This device is characterized by integrated circuits formed on an insulating substrate which employs bottom gate type thin film transistors. It features gate electrodes fabricated from metallic materials with a thickness of less than 100 nm, ensuring reduced thermal capacity. The design also includes a gate insulating film that is thicker than the gate electrodes, combined with a semiconductor thin film made of polycrystalline silicon that is crystallized by laser treatment. This inventive approach addresses the challenge of uniforming and optimizing recrystallization through laser anneal treatment, enhancing the performance of the active layer in bottom gate type thin film transistors.

Career Highlights: Hayashi's career has been marked by his tenure at leading technology corporations such as Sony Corporation and Fujitsu Corporation. His work within these companies has been pivotal in advancing semiconductor technologies and has significantly impacted the electronics industry.

Collaborations: Throughout his career, Hayashi has collaborated with notable professionals in the field, including Takashi Matsushita and Yasushi Shimogaichi. These collaborations have enriched his work and have played a significant role in the success of his inventions.

Conclusion: Hisao Hayashi's innovative spirit and relentless pursuit of excellence in semiconductor technology have made him a distinguished figure in his field. With 52 patents to his name, his contributions continue to influence the development of modern electronic devices. As technology evolves, his work promises to leave a lasting impact on future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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