Kanagawa, Japan

Hisao Hayashi


Average Co-Inventor Count = 2.6

ph-index = 23

Forward Citations = 1,561(Granted Patents)

Forward Citations (Not Self Cited) = 1,551(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Atsugi, JA (1976 - 1978)
  • Yokohama, JP (1985 - 1989)
  • Shinagawa, JP (1990)
  • Atsugi, JP (1979 - 1992)
  • Aichi, JP (2003)
  • Kawasaki, JP (1997 - 2004)
  • Kanagawa, JP (1987 - 2014)

Company Filing History:


Years Active: 1976-2014

Loading Chart...
Areas of Expertise:
Thin Film Semiconductor Device
Display Device
Thin-Film Transistor
Electroluminescence Display
Liquid Crystal Display
Multilayered Interconnection Substrate
Active-Matrix Substrate
Semiconductor Memory Devices
Vapor Deposition
Silicon Wafer Polishing
Polycrystalline Silicon
Communication Apparatus
52 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hisao Hayashi: A Pioneer in Semiconductor Technology

Introduction: Hisao Hayashi, hailing from Kanagawa, Japan, is a distinguished inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio comprising 52 patents, Hayashi has made remarkable strides in the development of thin film semiconductor devices, revolutionizing the way integrated circuits are formed and utilized in modern electronics.

Latest Patents: Among his latest innovations, Hayashi's patent for a thin film semiconductor device and its corresponding manufacturing method stands out. This device is characterized by integrated circuits formed on an insulating substrate which employs bottom gate type thin film transistors. It features gate electrodes fabricated from metallic materials with a thickness of less than 100 nm, ensuring reduced thermal capacity. The design also includes a gate insulating film that is thicker than the gate electrodes, combined with a semiconductor thin film made of polycrystalline silicon that is crystallized by laser treatment. This inventive approach addresses the challenge of uniforming and optimizing recrystallization through laser anneal treatment, enhancing the performance of the active layer in bottom gate type thin film transistors.

Career Highlights: Hayashi's career has been marked by his tenure at leading technology corporations such as Sony Corporation and Fujitsu Corporation. His work within these companies has been pivotal in advancing semiconductor technologies and has significantly impacted the electronics industry.

Collaborations: Throughout his career, Hayashi has collaborated with notable professionals in the field, including Takashi Matsushita and Yasushi Shimogaichi. These collaborations have enriched his work and have played a significant role in the success of his inventions.

Conclusion: Hisao Hayashi's innovative spirit and relentless pursuit of excellence in semiconductor technology have made him a distinguished figure in his field. With 52 patents to his name, his contributions continue to influence the development of modern electronic devices. As technology evolves, his work promises to leave a lasting impact on future innovations in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…